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Composite Transistors
XP01531
Silicon NPN epitaxial planer transistor
Unit: mm
2.10.1 0.425 1.250.1 0.425
0.65
s Features
q q
Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
2.00.1
1 2 3
5
0.65
4
0.2
q
2SC3130 x 2 elements
0.70.1
s Basic Part Number of Element
0.9 0.1
0 to 0.1
0.12 - 0.02
0.20.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg
(Ta=25C)
Ratings 15 10 3 50 150 150 -55 to +150 Unit V V V mA mW C C
1 : Base (Tr1) 2 : Emitter 3 : Base (Tr2)
4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC-88A S-Mini Type Package (5-pin)
Marking Symbol: 9F Internal Connection
1 2 3 4 Tr1 5
Tr2
s Electrical Characteristics
Parameter Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Collector to base parameter Common base reverse transfer capacitance
(Ta=25C)
Symbol VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob rbb'*CC Crb Conditions IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = -5mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = -5mA, f = 31.9MHz VCB = 4V, IE = 0, f = 1MHz 1.4 1.9 0.9 11.8 0.25 75 200 min 10 3 1 10 400 0.5 2.5 1.1 13.5 0.35 V GHz pF ps pF typ max Unit V V A A
+0.05
0.20.05
For high frequency, oscillation and mixing
1
Composite Transistors
PT -- Ta
200
80 Ta=25C 50 25C Ta=75C 40
XP01531
IC -- VCE
60 VCE=4V
IC -- VBE
Total power dissipation PT (mW)
180
Collector current IC (mA)
60
140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
IB=500A 40 400A 300A 20 200A 100A 0 0 2 4 6 8 10 12
Collector current IC (mA)
160
-25C
30
20
10
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
100
hFE -- IC
IC/IB=10 360 VCE=4V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 0 -0.1 -0.3
fT -- I E
VCB=4V Ta=25C
Collector to emitter saturation voltage VCE(sat) (V)
Forward current transfer ratio hFE
300 Ta=75C 240
10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Ta=75C
180
25C
120
-25C
60
0.3
1
3
10
30
100
Transition frequency fT (GHz)
30
0.3
1
3
10
30
100
-1
-3
-10
-30
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
1.6
Collector output capacitance Cob (pF)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10
f=1MHz IE=0 Ta=25C
30
100
Collector to base voltage VCB (V)
2
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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